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DMN601DWK
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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Features
* * * * * * * * * * Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free By Design/RoHS Compliant (Note 2) ESD Protected Up To 2kV "Green" Device (Note 4)
Mechanical Data
* * * * * * * *
SOT-363
NEW PRODUCT
Case: SOT-363 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals Connections: See Diagram Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.006 grams (approximate)
Drain
D2
G1
S1
Body Diode Gate
ESD Protected up to 2kV
S2
TOP VIEW
Gate Protection Diode
G2
D1
Source
EQUIVALENT CIRCUIT PER ELEMENT
TOP VIEW Internal Schematic
Maximum Ratings
Drain Source Voltage Gate-Source Voltage Drain Current (Note 1)
@TA = 25C unless otherwise specified Symbol VDSS VGSS Continuous Pulsed (Note 3) ID Value 60 20 305 800 Unit V V mA
Characteristic
Thermal Characteristics
Total Power Dissipation
@TA = 25C unless otherwise specified Symbol (Note 1) PD RJA Tj, TSTG Value 200 625 -65 to +150 Unit mW C/W C
Characteristic Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range
Electrical Characteristics
Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance
Notes: 1. 2. 3. 4. 5.
@TA = 25C unless otherwise specified Symbol BVDSS IDSS IGSS VGS(th) RDS (ON) |Yfs| (Note 5) VSD Ciss Coss Crss Min 60 1.0 80 0.5 Typ 1.6 Max 1 10 2.5 2.0 3.0 1.4 50 25 5.0 Unit V A A V ms V pF pF pF VDS = 25V, VGS = 0V f = 1.0MHz Test Condition VGS = 0V, ID = 10A VDS = 60V, VGS = 0V VGS = 20V, VDS = 0V VDS = 10V, ID = 1mA VGS = 10V, ID = 0.5A VGS = 5V, ID = 0.05A VDS =10V, ID = 0.2A VGS = 0V, IS = 115mA
Device mounted on FR-4 PCB. No purposefully added lead. Pulse width 10S, Duty Cycle 1%. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Short duration pulse test used to minimize self-heating effect.
DMN601DWK
Document number: DS30656 Rev. 5 - 2
1 of 4 www.diodes.com
December 2007
(c) Diodes Incorporated
DMN601DWK
VGS = 10V 8V 6V 5V 4V 3V
8V 6V 5V
ID, DRAIN CURRENT (A)
1.0 0.8 0.6 0.4 0.2 0 0
NEW PRODUCT
4V
3V
4 1 2 3 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics
5
VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics
2
VDS = 10V ID = 1mA Pulsed
10
1.5
1
1
0.5
0 -50
0.1
-25 75 100 125 0 25 50 TCH, CHANNEL TEMPERATURE (C) Fig. 3 Gate Threshold Voltage vs. Channel Temperature 150
ID, DRAIN CURRENT (A) Fig. 4 Static Drain-Source On-Resistance vs. Drain Current
10
RDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE ()
RDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE () 0
1 ID, DRAIN CURRENT (A) Fig. 5 Static Drain-Source On-Resistance vs. Drain Current
VGS, GATE SOURCE VOLTAGE (V) Fig. 6 Static Drain-Source On-Resistance vs. Gate-Source Voltage
DMN601DWK
Document number: DS30656 Rev. 5 - 2
2 of 4 www.diodes.com
December 2007
(c) Diodes Incorporated
DMN601DWK
VGS = 10V Pulsed
ID = 150mA
NEW PRODUCT
0 TCH, CHANNEL TEMPERATURE (C) Fig. 7 Static Drain-Source On-State Resistance vs. Channel Temperature
|Yfs|, FORWARD TRANSFER ADMITTANCE (S)
IDR, REVERSE DRAIN CURRENT (A)
IDR, REVERSE DRAIN CURRENT (A)
ID = 300mA
1
ID, DRAIN CURRENT (A) Fig.10 Forward Transfer Admittance vs. Drain Current
1
Ordering Information
Part Number DMN601DWK-7
Notes:
(Note 6) Case SOT-363 Packaging 3000/Tape & Reel
6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
D2 G1 S1
K7K YM
S2
K7K = Marking Code YM = Date Code Marking Y = Year ex: S = 2005 M = Month ex: 9 = September
Date Code Key Year Code Month Code
2005 S Jan 1 Feb 2
2006 T Mar 3
DMN601DWK
Document number: DS30656 Rev. 5 - 2
K7K YM
G2 D1
2007 U Apr 4 May 5
2008 V Jun 6
2009 W Jul 7 Aug 8
2010 X Sep 9
2011 Y Oct O Nov N
2012 Z Dec D
3 of 4 www.diodes.com
December 2007
(c) Diodes Incorporated
DMN601DWK Package Outline Dimensions
A
BC
NEW PRODUCT
H K M
J
D
F
L
SOT-363 Min Max Dim 0.10 0.30 A 1.15 1.35 B C 2.00 2.20 0.65 Nominal D 0.30 0.40 F 1.80 2.20 H 0.10 J K 0.90 1.00 L 0.25 0.40 M 0.10 0.25 0 8 All Dimensions in mm
Suggested Pad Layout
E E
Z
G
C
Dimensions Value (in mm) Z 2.5 G 1.3 X 0.42 Y 0.6 1.9 C E 0.65
Y X
IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated.
DMN601DWK
Document number: DS30656 Rev. 5 - 2
4 of 4 www.diodes.com
December 2007
(c) Diodes Incorporated

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